Rated 
(4/5) based on 6 customer reviews
(4/5) based on 6 customer reviews
| Part Number | IPW65R110CFD |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 650V 31.2A TO247 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Image |  |
Lowest Price: $0.51
Highest Price: $2.84
1 - 5 of 5 Record(s)
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Part Number:
IPW65R110CFD
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Part Number:
IPW65R110CFD 65F6110A
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IPW65R110CFD Ref.
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