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Description
Datasheet l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. Benefits. TO-220AB. IRF1407PbF . Parameter. Typ. Max. Units. Oct 11, 2001 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 130V. ID @ TC = 100 C. Continuous Drain Current, VGS @
Part Number | IRF1407PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 75V 130A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 330W (Tc) |
Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 78A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image | ![]() |
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