Texas Instruments

Description

Aug 10, 2004 IRF640N . IRF640NS. IRF640NL. Fifth Generation HEXFET Power MOSFETs from. International Rectifier utilize advanced processing. Page 1. Page 2. Page 3. Page 4. |RF640. 3000. VGs = ov, f = 1MHz. Ciss = * Cog. Cds SHORTED. Crss = Cad. 2500. Coss Cos t Cad. . [T 2000. S. q} Siss. IRF640 . IRF640FP. N-channel 200V - 0.15 - 18A TO-220/TO-220FP. Mesh overlay Power MOSFET. General features. Extremely high dv/dt capability. IRF640 . SiHF640. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. IRF640 , RF1S640,RF1S640SM. 18A, 200V, 0.180 Ohm, N-Channel Power Mosfets www.artschip.com. 1. These are N-Channel enhansement mode silicon gate