Part Number | IRF7341TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET 2N-CH 55V 4.7A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 4.7A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
IRF7341TRPBF
TI/ST
4770
1.03
Superior Electronics Limited
IRF7341TRPBF
TexasIns
2207
2.2175
HK FEILIDI ELECTRONIC CO., LIMITED
IRF7341TRPBF
TI/CC
9211
3.405
HEXING TECHNOLOGY (HK) LIMITED
IRF7341TRPBF
TI?
2011
4.5925
ACHIEVE ELECTRONICS CO., LIMITED
IRF7341TRPBF
TI-BB
6312
5.78
ANCHIP TECHNOLOGY CO., LIMITED