Part Number | IRF7406PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 30V 5.8A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 2.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7406PBF
TI/ST
1145
0.6
ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED
IRF7406PBF
TexasIns
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1.215
Bonase Electronics (HK) Co., Limited
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TI/CC
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WIN AND WIN ELECTRONICS LIMITED
IRF7406PBF
TI?
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2.445
N&S Electronic Co., Limited
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TI-BB
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ALLCHIPS ELECTRONICS LIMITED