(5/5) based on 16 customer reviews
Description
Mar 21, 2011 SiHF820-E3. SnPb. IRF820 . SiHF820. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. 1/12. 12. IRF820 . N-channel 500V - 2.5 - 4A TO-220. PowerMesh II MOSFET. General features. Extremely high dv/dt capability. 100% avalnche tested. IRF420-423/ IRF820 -823. MTP2N45/2N50. N-Channel Power MOSFETs. 3.0A, 450V/500V www.artschip.com. 1. Description. These devices are n-channel, May 25, 2001 IRF820 . IRF830. 500 ON Semi NTP6N50 IR. IRF830. IRF840. 500 ON Semi NTP8N50 IR. IRF840. MTP4N50E 500 ON Semi NTP6N50 STM.
| Part Number | IRF820 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 500V 2.5A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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