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Description
IRF9630S , SiHF9630S www.vishay.com. Vishay Siliconix. S16-0754-Rev. D, 02- May-16. 1. Document Number: 91085. For technical questions, contact: Sep 15, 2008 Power MOSFET. IRF9630S , SiHF9630S. Vishay Siliconix. FEATURES. Halogen -free According to IEC 61249-2-21. Definition. Surface Mount. IRF9630 , SiHF9630. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
| Part Number | IRF9630S |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 200V 6.5A D2PAK |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 3.9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
IRF9630S
TI/ST
11004
1.43
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1000
2.8525
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10000
4.275
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3000
5.6975
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Yingxinyuan INT'L (Group) Limited
