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Description
May 4, 2017 Gate Voltage. Fig 2. Maximum Drain Current vs. Case Temperature. TO-220AB. IRFB7534PbF . D2Pak. IRFS7534PbF. TO-262. IRFSL7534PbF. IRFB7534PBF . 2.4. IRFB7537PBF. 3.3. IRFB7540PBF. 5.1. 110. IRFB7545PBF. 5.9. 85. IRFB7546PBF. 7.3. 75. IRF60B217*. 9.0. 60. TO-247. IRFP7530PBF. 2.0. IRFS7534PBF. 2.4. IRFS7530-7PPBF. 1.4. IRFB7534PBF . 2.4. IRF7749L1TRPBF . 1.5. IRLS3036PBF. 2.4. IRLB3036PBF. 2.4. IRFS7530PBF. 2.0. IRFB7530PBF.
| Part Number | IRFB7534PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N CH 60V 195A TO-220AB |
| Series | HEXFET, StrongIRFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 279nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10034pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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