Part Number | IRFHM3911TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 100V 10A PQFN |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 29W (Tc) |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 6.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (3x3) |
Package / Case | 8-PowerTDFN |
Image |
IRFHM3911TRPBF
TI/ST
16000
1.3
Finestock Electronics HK Limited
IRFHM3911TRPBF
TexasIns
180
2.0175
SUNTOP SEMICONDUCTOR CO., LIMITED
IRFHM3911TRPBF
TI/CC
100000
2.735
Yataitong Electronic Technology Co., Limited
IRFHM3911TRPBF
TI?
47973
3.4525
Yingxinyuan INT'L (Group) Limited
IRFHM3911TRPBF
TI-BB
135359
4.17
Kunlida Electronics (HK) Limited