(4/5) based on 12 customer reviews
Description
Datasheet IRLML5203 . HEXFET. . Power MOSFET. These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the. H = IRLML5203 . LOT. CODE. Notes: This part marking information applies to devices produced after 02/26/2001. W = (1-26) IF PRECEDED BY LAST DIGIT OF Sep 6, 2005 L1. 1.2uH. Q1. IRLML5203 . R1. 0.1. R2. R3. C6. 10uF. C3. 100pF. 10K. 10K. 10BQ015. C1 1uF. C4. 10uF. PACKAGE ORDER INFORMATION. G = IRLML2502. H = IRLML5203 . Note: A line above the work week. (as shown here) indicates Lead-free. Micro3 (SOT-23 / TO-236AB) Part Marking Information. H = IRLML5203 . LOT. CODE. Notes: This part marking information applies to devices produced after 02/26/2001. W = (1-26) IF PRECEDED BY LAST DIGIT OF
| Part Number | IRLML5203 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 30V 3A SOT-23 |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 3A, 10V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3,SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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