Part Number | IRLR2908PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 80V 30A DPAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1890pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 23A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRLR2908PBF
TI/ST
45000
0.24
Yingxinyuan INT'L (Group) Limited
IRLR2908PBF
TexasIns
18650
1.52
Fairstock HK Limited
IRLR2908PBF
TI/CC
55300
2.8
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRLR2908PBF
TI?
15000
4.08
MY Group (Asia) Limited
IRLR2908PBF
TI-BB
20000
5.36
Shenzhen Fuxinwei Semiconductor Co., Ltd