Description
Datasheet 2006 IXYS All rights reserved. DS99562E(02/06). PolarHVTM HiPerFET. Power MOSFET. V. DSS. = 800 V. I. D25. = 53 A. R. DS(on) 140 m t rr. 250 ns. IXFN60N80P . IXFD15N100P-76. 1000. 0.76. IX76. 8.90 x 7.14. 351 x 281. 15 mil x 4. IXFH15N100P. IXFD20N100P-85. 0.57. IX85. 12.17 x 7.14. 479 x 281.
Part Number | IXFN60N80P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 800V 53A SOT-227B |
Series | PolarHV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 53A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 18000pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1040W (Tc) |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
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