Part Number | IXTY02N120P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 1200V 0.2A DPAK |
Series | Polar |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 104pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 33W (Tc) |
Rds On (Max) @ Id, Vgs | 75 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IXTY02N120P
TI/ST
5793
1.23
Southern Electronics Tech Limited
IXTY02N120P
TexasIns
9195
2.34
BD Electronics Ltd
IXTY02N120P
TI/CC
7586
3.45
MY Group (Asia) Limited
IXTY02N120P
TI?
8279
4.56
KEMING ELECTRONICS DEVELOPMENT CO., LIMITED
IXTY02N120P
TI-BB
3131
5.67
CORE SOLUTIONS ELECTRONIC CO., LIMITED