Description
MBD330DWT1G . Dual Schottky Barrier. Diodes. Application circuit designs are moving toward the consolidation of device count and into smaller packages. (V). IRM Max. ( A). IO(rec) Max. (A). IFSM Max. (A) trr Max. (ns). Cj Max. (pF). Package. Type. MBD330DWT1G . AEC. Qualified. Pb-free. Halide free. Active. Dual. Nov 2, 2009 MBD330DWT1G . MBD54DWT1G. MBD770DWT1G. MMBD101LT1G. MMBD301LT1. MMBD301LT1G. MMBD301LT1H. Issue Date: 02-Nov- Jan 2, 2007 MBD330DWT1G . ON Semiconductor. MC10102L. MC10H102PG. ON Semiconductor. MC10109L. MC10H109PG. ON Semiconductor. Apr 29, 2009 MBD330DWT1G . MBD54DWT1G. MBD54DWT1G. MBD770DWT1G. MMBD101LT1G. MMBD301LT1. MMBD301LT1G. MMBD301LT1H.
Part Number | MBD330DWT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - RF |
Brand | Texas Instruments |
Description | DIODE SCHOTTKY DUAL 30V SOT-363 |
Series | - |
Packaging | |
Diode Type | Schottky - 2 Independent |
Voltage - Peak Reverse (Max) | 30V |
Current - Max | - |
Capacitance @ Vr, F | 1.5pF @ 15V, 1MHz |
Resistance @ If, F | - |
Power Dissipation (Max) | 120mW |
Operating Temperature | -55°C ~ 125°C (TJ) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
MBD330DWT1G
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2300
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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