Part Number | MCMN2012-TP |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 20V 12A DFN202 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 4V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 9.7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN2020-6J |
Package / Case | 6-WDFN Exposed Pad |
Image |
MCMN2012-TP
TI/ST
3782
0.84
MY Group (Asia) Limited
MCMN2012-TP
TexasIns
5944
2.29
Hong Kong Fly Bird Technology Limited
MCMN2012-TP
TI/CC
5580
3.74
Bonase Electronics (HK) Co., Limited
MCMN2012-TP
TI?
9965
5.19
Finestock Electronics HK Limited
MCMN2012-TP
TI-BB
1169
6.64
Fairstock HK Limited