Texas Instruments

Description

The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility. Transistor) is designed for use in K band amplifiers. FEATURES. Low noise figure @ f= 2. QL-1097E-B. 1. Outline Drawing. Micro-X type plastic packaged device ( MGF4941AL/CL, MGF4964BL /63BL) : GD-32. . (0 .3. 0. ) (0.3. 0). 3.2 0.1. 2.6 0.1. High Frequency devices are compliant with the RoHS(2011/65/EU). MGF4941CL . MGF4965BM. MGF4964BL . MGF4941AL. MGF4937AM. MGF4936AM. Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable MGF4964BL . MGF4965BM. MGF4935AM. MGF4941CL . MGF4937AM. MGF4941AL. GaAs HEMT/MES FET,InGaP HBT .