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Description
(Note: Microdot may be in either location). *Date Code orientation and/or overbar may vary depending upon manufacturing location. MGSF1N03LT1G . SOT-23. Oct 23, 2015 MGSF1N03LT1G . NO. Yes. Q1. 1. N-CHANNEL MOS FET. MGSF1N03LT1G . -. SOT23. On Semiconductor. MGSF1N03LT1G . NO. Yes. Q2. 1. Oct 17, 2012 ON Semiconductor is notifying customers of its plan to transfer its High Cell Density HD1 MOSFETs from the ON Semiconductor fab located in Abstract. The article describes new SPICE and SABER simulation models which contain a dynamic link between electrical and thermal component descriptions. Sep 16, 2016 INCHES. MILLIMETERS. DIM MIN. NOM. MAX. MIN. NOM. MAX. A. 0.89. 1.00. 1.11. 0.035 0.039 0.044. A1. 0.01. 0.06. 0.10. 0.000 0.002 0.004.
| Part Number | MGSF1N03LT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V 1.6A SOT-23 |
| Series | - |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 5V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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