Description
Apr 14, 2010 MMBF2202PT1G . NTS4101PT1G. ON Semiconductor. MMBFJ175LT1. MMBFJ175LT1G. ON Semiconductor. MMBT2222ALT1H. Jul 1, 2009 MMBF2202PT1G . NTE4151PT1. NTE4153NT1. NTJD4158CT1. NTJD4401NT1H . NTJD5121NT1. NTJS4160NT1. NTJS4405NT1. May 26, 2009 MMBF170LT3G. MMBF170LT3. MMBF2201NT1G. MMBF2201NT1. MMBF2202PT1G . MMBF2202PT1. MMBFV170LT1G. MMBFV170LT3G. SW2. SKRPABE010. SW2. SKRPABE010. 1. 4. 2. 3. D4. HSMG-C170. D4. HSMG -C170. 2. 1. R17. 1.0K. R17. 1.0K. Q4. MMBF2202PT1G . Q4. MMBF2202PT1G . Jan 21, 2010 MMBF2202PT1G . ON Semiconductor. MMBF4392LT1. MMBF4392LT1G. ON Semiconductor. MMBF4393LT1. MMBF4393LT1G.
Part Number | MMBF2202PT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 0.3A SOT323 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 5V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150mW (Ta) |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 200mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-3 (SOT323) |
Package / Case | SC-70, SOT-323 |
Image |
MMBF2202PT1G
TI/ST
89127
1.66
Kunlida Electronics (HK) Limited
MMBF2202PT1G
TexasIns
30000
2.4475
Belt (HK) Electronics Co
MMBF2202PT1G
TI/CC
6000
3.235
RX ELECTRONICS LIMITED
MMBF2202PT1G
TI?
4868000
4.0225
Shenzhen WTX Capacitor Co., Ltd.
MMBF2202PT1G
TI-BB
6000
4.81
Riking Technology (HK) Co., Limited