Part Number | MMSF3P02HDR2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 5.6A 8-SOIC |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 16V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
MMSF3P02HDR2
TI/ST
5221
1
HK HEQING ELECTRONICS LIMITED
MMSF3P02HDR2
TexasIns
4413
2.0225
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MMSF3P02HDR2
TI/CC
1819
3.045
Pacific Corporation
MMSF3P02HDR2
TI?
6705
4.0675
Redstar Electronic Limited
MMSF3P02HDR2
TI-BB
5068
5.09
Yingxinyuan INT'L (Group) Limited