Texas Instruments

Description

Power MOSFET Basics. Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques CSD18537NKCS 60 V N-Channel NexFET Power MOSFET . 1 Features. Product Summary. 1 Ultra Low Qg and Qgd. TA = 25 C. TYPICAL VALUE. UNIT. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com. Rev. 1.0.5 9/ 4/13. 3. 2. Structure of a MOSFET . 2.1. Lateral Channel Design. The drain, gate These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated In general, a higher switching frequency and higher input voltage require a lower QG (gate charge) to cut down the switching losses in the switch MOSFET (Q1).