Part Number | MUN5312DW1T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Texas Instruments |
Description | TRANS PREBIAS NPN/PNP SOT363 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
MUN5312DW1T1G
TI/ST
8025
0.34
CIS Ltd (CHECK IC SOLUTION LIMITED)
MUN5312DW1T1G
TexasIns
3890
1.46
Zhaoxin Electronic Limited
MUN5312DW1T1G
TI/CC
9423
2.58
Bonase Electronics (HK) Co., Limited
MUN5312DW1T1G
TI?
5397
3.7
Bonase Electronics (HK) Co., Limited
MUN5312DW1T1G
TI-BB
3887
4.82
CIS Ltd (CHECK IC SOLUTION LIMITED)