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Description
Datasheet Jul 14, 2015 Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. NDT2955 . Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. NDT2955 . SOT223-4 (CuBW). FSCP. FSCP. 0.119. 1. Semiconductor Components Industries, LLC, 2014. September, 2014 Rev. 14. 1. Publication Order Number: NTD2955/D. NTD2955, NVD2955. a 60 V P-channel power MOSFET, like the NDT2955 , can be used. Because of the MOSFET internal diode, the battery first conducts through the P1 body diode OnSemiconductor. SMC. BAS21-03W. SOD323. General Purpose Diodes. NDT2955 . Fairchild. SOT-223. BSP170P. SOT-223. Small signal MOSFET. NDT2955 .
| Part Number | NDT2955 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 60V 2.5A SOT-223-4 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 601pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 2.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
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