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Description
Dec 1, 1998 Absolute Maximum Ratings TA = 25 C unless otherwise noted. Symbol. Parameter. NDT456P . Units. VDSS. Drain-Source Voltage. -30. V. MOSFET to control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering MOSFET to control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering Fairchild NDT456P . Q142. 1 n-channel FET (SOT23). Central Semi 2N7002. R0, R12. 2. 0I Q5% resistors (0603). R9. 1. 4.7kI Q5% resistor (0603). R14, R15. 2. NXP small-signal N- and. P-channel MOSFETs. Our advanced MOSFET solutions deliver the flexibility and performance that todays market demands. Choose
| Part Number | NDT456P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 30V 7.5A SOT-223-4 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 7.5A, 10V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
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