Part Number | NSVBC114YDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Texas Instruments |
Description | TRANS 2NPN PREBIAS 0.5W SOT563 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSVBC114YDXV6T1G
TI/ST
40000
0.17
Hong Kong YST Electronics Co., Limited
NSVBC114YDXV6T1G
TexasIns
35800
0.6075
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NSVBC114YDXV6T1G
TI/CC
6000
1.045
Riking Technology (HK) Co., Limited
NSVBC114YDXV6T1G
TI?
180
1.4825
SUNTOP SEMICONDUCTOR CO., LIMITED
NSVBC114YDXV6T1G
TI-BB
20500
1.92
CIS Ltd (CHECK IC SOLUTION LIMITED)