Description
MOSFET N/P-CH 20V 4A/3.1A 1206A Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 4A, 3.1A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250米A Gate Charge (Qg) @ Vgs: 7.9nC @ 4.5V Input Capacitance (Ciss) @ Vds: 510pF @ 10V Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?
Part Number | NTHD3102CT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET N/P-CH 20V 4A/3.1A 1206A |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A, 3.1A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 10V |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | ChipFET |
Image |
NTHD3102CT1G
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HK HEQING ELECTRONICS LIMITED
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