(4/5) based on 2 customer reviews
Description
MOSFET N/P-CH 20V/8V SOT-363 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25～C: 630mA, 775mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363
| Part Number | NTJD4105CT2G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET N/P-CH 20V/8V SOT-363 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 630mA, 775mA |
| Rds On (Max) @ Id, Vgs | 375 mOhm @ 630mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
| Power - Max | 270mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Image |  |
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