(4/5) based on 12 customer reviews
Description
MOSFET 2N-CH 30V 4A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) @ Vds: 400pF @ 20V Power - Max: 2W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC
| Part Number | NTMD4N03R2G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET 2N-CH 30V 4A 8SOIC |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 20V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Image |  |
NTMD4N03R2G
TI/ST
6000
0.39
ZY (HK) TECHNOLOGY LIMITED
NTMD4N03R2G
TexasIns
5000000
1.435
Hongkong Shengshi Electronics Limited
NTMD4N03R2G
TI/CC
36850
2.48
Z.H.T TECHNOLOGY HK LIMITED
NTMD4N03R2G
TI?
1350
3.525
Nosin (HK) Electronics Co.
NTMD4N03R2G
TI-BB
600000
4.57
Shenzhen WTX Capacitor Co., Ltd.
