Part Number | NVF6P02T3G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 10A SOT-223 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 16V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 8.3W (Ta) |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 6A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 (TO-261) |
Package / Case | TO-261-4, TO-261AA |
Image |
Hot Offer
NVF6P02T3G
TI-BB
2600
2.68
Yu Hong Technologies Limited
NVF6P02T3G
TI/ST
25000
0.35
Ysx Tech Co., Limited
NVF6P02T3G
TexasIns
28430
0.9325
N&S Electronic Co., Limited
NVF6P02T3G
TI/CC
11100
1.515
N&S Electronic Co., Limited
NVF6P02T3G
TI?
4868000
2.0975
Shenzhen WTX Capacitor Co., Ltd.