(5/5) based on 17 customer reviews
Description
DATASHEET PMV45EN2 . 30 V, N-channel Trench MOSFET. 3 June 2014. Product data sheet. Scan or click this QR code to view the latest information for this product. 1. Quality Information for Product Type PMV45EN2 . Quality and reliability data provided by NXP Semiconductors is intended to be a non-binding estimate of Reliability Investigation Results for Product Type PMV45EN2 . Product Reliability www.nxp.com. 2015 NXP Semiconductors N.V.. All rights reserved. Jun 30, 2014 Of Life. Multiple. 31-Dec-2014. 30-Jun-2015 PMV45EN2R . 934068494215. PMV45EN2 small signal MOSFET. PMV56XN,215. 934057732215.
| Part Number | PMV45EN2R |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V SOT23 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 209pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta), 5W (Tc) |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 4.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
PMV45EN2R
TI/ST
150000
1
HONG KONG HORNG SHING LIMITED
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180
1.92
SUNTOP SEMICONDUCTOR CO., LIMITED
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186456
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3000
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