Part Number | PSMN5R6-60YLX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 60V LFPAK56 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 66.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5026pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |
Image |
PSMN5R6-60YLX
TI/ST
21930
0.6
LIXINC Electronics Co., Limited
PSMN5R6-60YLX
TexasIns
220360
1.7
Cinty Int'l (HK) Industry Co., Limited
PSMN5R6-60YLX
TI/CC
15000
2.8
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
PSMN5R6-60YLX
TI?
90000
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Redstar Electronic Limited
PSMN5R6-60YLX
TI-BB
11050
5
N&S Electronic Co., Limited