Description
DESCRIPTION. The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 135- to 175-MHz range. The battery Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,. Professional Mobile Radios, Amateur Radios Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,. Professional Mobile Radios, Amateur Radios,
Part Number | RA08H1317M |
Brand | Texas Instruments |
Image |
RA08H1317M
TI/ST
1000
0.39
Bonase Electronics (HK) Co., Limited
RA08H1317M
TexasIns
100
1.1375
Gallop Great Holdings (Hong Kong) Limited
RA08H1317M
TI/CC
138311
1.885
Cicotex Electronics (HK) Limited
RA08H1317M
TI?
100
2.6325
Antony Electronic Ltd.
RA08H1317M
TI-BB
6359
3.38
Belt (HK) Electronics Co