Part Number | RFD3055LE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 60V 11A I-PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 107 mOhm @ 8A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251AA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
RFD3055LE
TI/ST
4752
0.34
HK HEQING ELECTRONICS LIMITED
RFD3055LE
TexasIns
8758
1.085
Gallop Great Holdings (Hong Kong) Limited
RFD3055LE
TI/CC
9670
1.83
Cicotex Electronics (HK) Limited
RFD3055LE
TI?
9608
2.575
SUMMER TECH(HK) LIMITED
RFD3055LE
TI-BB
6106
3.32
Nosin (HK) Electronics Co.