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Description
DATASHEET 2011 Fairchild Semiconductor Corporation. RHRP860 Rev. C. Test Circuits and Waveforms. FIGURE 8. trr TEST CIRCUIT. FIGURE 9. trr WAVEFORMS AND Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. RHRP860 . TO220 -2 Mar 29, 2016 RHRP860 . TO220-2 (G). (Suzhou). Mar 29, 2016. 1.0. FSSZ. 1.978424 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Nov 12, 2015 4.7 F. 250V. C605. 470 F. 250V. C606. 470 F. 250V. C607. 200V/2.6A. GND. 3. 1. D602. RHRP860 . 3. 1. D605. RHRP860 . 3.40k. R620. 1. 2. Eon @ ISL9R1560. Eon @ RHRP860 . Eon @ ISL9R860. Eon @ ISL9R460. Eon @ SIC 6A. Figure IV-2: EON losses versus voltage for a wide range of diodes.
| Part Number | RHRP860 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Texas Instruments |
| Description | DIODE GEN PURP 600V 8A TO220AC |
| Series | Automotive, AEC-Q101 |
| Packaging | Tube |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 100µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Image |  |
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