(5/5) based on 8 customer reviews
Description
Density. 1 Gb / 2 Gb / 4 Gb. Architecture. Input / Output Bus Width: 8 bits / 16 bits. Page size: 8: 1 Gb: (2048 + 64) bytes; 64-byte spare area. 2 Gb / 4 S34ML01G200BHI000 . Cypress Semiconductor Corporation. 198 Champion Court. San Jose, CA 95134, USA. Note: This is an electronically printed document, May 26, 2017 The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The. S29GL064N is Dec 1, 2015 Start Date. 1Gb. S34ML01G200BHI000 . S34ML01G200BHV000. S34ML01G200TFI000. S34ML01G200TFV000. S34MS01G200TFI000. Micron single level cell (SLC) NAND Flash memory features a unique serial number identifier. The first eight bytes of the OTP area contain a unique identifier
| Part Number | S34ML01G200BHI000 |
| Main Category | Integrated Circuits (ICs) |
| Sub Category | Memory |
| Brand | Texas Instruments |
| Description | IC FLASH 1GBIT 25NS 63BGA |
| Series | ML-2 |
| Packaging | Tray |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | - |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-BGA (11x9) |
| Image |  |
Hot Offer
S34ML01G200BHI000
TI/ST
4200
1.84
NAND FUND CHUEN SHING ELECTRONIC(SZ)CO.,LTD
S34ML01G200BHI000
TexasIns
27300
2.9925
Elicink Electronics Co., Limited
S34ML01G200BHI000
TI/CC
15000
4.145
Shenzhen Epamic Technology Co., Limited
S34ML01G200BHI000
TI?
605
5.2975
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
S34ML01G200BHI000
TI-BB
2000
6.45
KUMPLE TECHNOLOGY LIMITED
