Rated 
(5/5) based on 10 customer reviews
(5/5) based on 10 customer reviews
| Part Number | SI2301BDS-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 20V 2.2A SOT23-3 |
| Series | TrenchFET |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 6V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.8A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Lowest Price: $0.84
Highest Price: $6.7
1 - 5 of 5 Record(s)
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SI2301BDS-T1-GE3
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Shenzhen WTX Capacitor Co., Ltd.
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SI2301BDST1GE3 Ref.
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