(5/5) based on 6 customer reviews
Description
Nov 2, 2009 Ordering Information: Si2343CDS - T1 - GE3 (Lead (Pb)-free and Halogen-free). S. G. D. P-Channel MOSFET. ABSOLUTE MAXIMUM RATINGS 1. M1. MOSFET, SMT, 60V, 72m , PowerPAK1212-8. VISHAY, Si7308DN-T1- GE3. 15. 1. M2. MOSFET, SMT, 30V, 75m , SOT23. VISHAY, Si2343CDS - T1 - GE3 . to the DC1682A through the 34-pin connector. VDD33. VDD33. T1 . DND 1K 0805. R20. 1K 0805. E26. Q4 Si2343CDS . 1. 3. 2. RL11 1.5K. E3 . MSD. E3 .
| Part Number | SI2343CDST1GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 30V 5.9A SOT-23 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Hot Offer
SI2343CDS-T1-GE3
TI-BB
30000
5.12
Hong Kong In Fortune Electronics Co., Limited
SI2343CDS-T1-GE3
TI/ST
130723
0.55
SUNTOP SEMICONDUCTOR CO., LIMITED
SI2343CDS-T1-GE3
TexasIns
9000
1.6925
HK HEQING ELECTRONICS LIMITED
SI2343CDS-T1-GE3
TI/CC
39655
2.835
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI2343CDS-T1-GE3
TI?
52632
3.9775
Innovation Best Electronics Technology Limited
