Part Number | SI3440DV-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 150V 1.2A 6-TSOP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.14W (Ta) |
Rds On (Max) @ Id, Vgs | 375 mOhm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
Hot Offer
SI3440DV-T1-GE3
TI/ST
1200000
1.16
Shenzhen Yuding Technology Co., Ltd
Si3440DV-T1-GE3
TexasIns
12000
1.78
Ande Electronics Co., Limited
Si3440DV-T1-GE3
TI/CC
39545
2.4
CIS Ltd (CHECK IC SOLUTION LIMITED)
Si3440DV-T1-GE3
TI?
40665
3.02
Ande Electronics Co., Limited
SI3440DVT1GE3
TI-BB
10080
3.64
Ande Electronics Co., Limited