Part Number | SI4124DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 40V 20.5A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 20.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3540pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Si4124DY-T1-GE3
TI/ST
5000000
1.12
Hongkong Shengshi Electronics Limited
SI4124DY-T1-GE3
TexasIns
79999
2.24
Gallop Great Holdings (Hong Kong) Limited
SI4124DY-T1-GE3
TI/CC
850000
3.36
Far East Electronics Technology Limited
SI4124DY-T1-GE3
TI?
50000
4.48
Hong Kong Yingweida Electronics Co., Ltd.
SI4124DY-T1-GE3.
TI-BB
25200
5.6
CIS Ltd (CHECK IC SOLUTION LIMITED)