Part Number | SI4178DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 12A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 15V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 8.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4178DY-T1-GE3
TI/ST
2947
0.37
Pacific Corporation
SI4178DY-T1-GE3
TexasIns
8
0.795
HXY Electronics (HK) Co.,Limited
SI4178DY-T1-GE3
TI/CC
4868000
1.22
Shenzhen WTX Capacitor Co., Ltd.
SI4178DY-T1-GE3
TI?
20000
1.645
Xinye International Technology Limited
SI4178DY-T1-GE3
TI-BB
19800
2.07
WIN AND WIN ELECTRONICS LIMITED