Part Number | SI4403CDY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 20V 13.4A 8SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 13.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2380pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 5W (Tc) |
Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 9A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4403CDY-T1-GE3
TI/ST
6500
0.19
Gallop Great Holdings (Hong Kong) Limited
SI4403CDY-T1-GE3
TexasIns
4544
1
Viassion Technology Co., Limited
SI4403CDY-T1-GE3
TI/CC
11001
1.81
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4403CDY-T1-GE3
TI?
50492
2.62
N&S Electronic Co., Limited
SI4403CDY-T1-GE3
TI-BB
4868000
3.43
Shenzhen WTX Capacitor Co., Ltd.