Part Number | SI4435DYTR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 30V 8A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4435DYTR
TI/ST
190
1.58
Gallop Great Holdings (Hong Kong) Limited
SI4435DYTR
TexasIns
5982
2.6025
Xian Neng Technology (Hongkong) International Limited
SI4435DY-TR
TI/CC
180
3.625
SUNTOP SEMICONDUCTOR CO., LIMITED
SI4435DYTR
TI?
1000
4.6475
Yingxinyuan INT'L (Group) Limited
SI4435DY-TR
TI-BB
61000
5.67
CIS Ltd (CHECK IC SOLUTION LIMITED)