Part Number | SI4630DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 25V 40A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 161nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6670pF @ 15V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4630DY-T1-E3
TI/ST
2752
1.73
HK HEQING ELECTRONICS LIMITED
SI4630DY-T1-E3
TexasIns
5479
3.0725
Gallop Great Holdings (Hong Kong) Limited
SI4630DY-T1-E3
TI/CC
7751
4.415
Far East Electronics Technology Limited
SI4630DY-T1-E3
TI?
1132
5.7575
Cicotex Electronics (HK) Limited
SI4630DY-T1-E3
TI-BB
4927
7.1
Shenzhen WTX Capacitor Co., Ltd.