Rated 
(4/5) based on 9 customer reviews
(4/5) based on 9 customer reviews
| Part Number | SI4840BDYT1GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 40V 19A 8SOIC |
| Series | TrenchFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 12.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
Lowest Price: $1.67
Highest Price: $5.66
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SI4840BDY-T1-GE3
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TexasIns
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SI4840BDY-T1-GE3
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SI4840BDY-T1-GE3
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TI-BB
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Company:
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SI4840BDYT1GE3 Ref.
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