Part Number | SI6562CDQ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Texas Instruments |
Description | MOSFET N/P-CH 20V 6.7A 8-TSSOP |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.7A, 6.1A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 5.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V |
Power - Max | 1.6W, 1.7W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Image |
SI6562CDQ-T1-GE3
TI/ST
6168
0.32
Cicotex Electronics (HK) Limited
SI6562CDQ-T1-GE3
TexasIns
5596
0.7375
HK HEQING ELECTRONICS LIMITED
SI6562CDQ-T1-GE3
TI/CC
6008
1.155
WIN AND WIN ELECTRONICS LIMITED
SI6562CDQ-T1-GE3
TI?
638
1.5725
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI6562CDQ-T1-GE3
TI-BB
3777
1.99
Gallop Great Holdings (Hong Kong) Limited