Part Number | SI7106DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 20V 12.5A 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 19.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
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SI7106DN-T1-GE3
TI/ST
3000
0.43
Gallop Great Holdings (Hong Kong) Limited
SI7106DN-T1-GE3
TexasIns
24000
1.46
Magic Intertrade Co., Limited
SI7106DN-T1-GE3
TI/CC
180
2.49
SUNTOP SEMICONDUCTOR CO., LIMITED
SI7106DN-T1-GE3
TI?
4868000
3.52
Shenzhen WTX Capacitor Co., Ltd.
SI7106DN-T1-GE3
TI-BB
271802
4.55
Cicotex Electronics (HK) Limited