Part Number | SI7114DN-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 11.7A 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 18.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7114DN-T1-E3
TI/ST
5841
0.02
Gallop Great Holdings (Hong Kong) Limited
SI7114DN-T1-E3
TexasIns
1162
1.1125
WIN AND WIN ELECTRONICS LIMITED
Si7114DN-T1-E3
TI/CC
5851
2.205
Shenzhen WTX Capacitor Co., Ltd.
SI7114DN-T1-E3
TI?
1881
3.2975
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED
SI7114DN-T1-E3
TI-BB
7629
4.39
Cicotex Electronics (HK) Limited