Part Number | SI7139DPT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 30V 40A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4230pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7139DP-T1-GE3
TI/ST
3786
0.85
HK HEQING ELECTRONICS LIMITED
SI7139DP-T1-GE3
TexasIns
19
1.735
TOP-Q COMPONENT PTE. LTD
SI7139DP-T1-GE3
TI/CC
182
2.62
Hong Kong Yingweida Electronics Co., Ltd.
Si7139DP-T1-GE3
TI?
4868000
3.505
Shenzhen WTX Capacitor Co., Ltd.
SI7139DP-T1-GE3 MOS()
TI-BB
40
4.39
Rainstar Components USA Incorporated Limited