Part Number | SI7478DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 60V 15A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
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SI7478DP-T1-E3
TI/ST
4758
1.05
Gallop Great Holdings (Hong Kong) Limited
SI7478DP-T1-E3
TexasIns
9052
1.84
Belt (HK) Electronics Co
Si7478DP-T1-E3
TI/CC
7860
2.63
Shenzhen WTX Capacitor Co., Ltd.
SI7478DP-T1-E3
TI?
7923
3.42
Nosin (HK) Electronics Co.
SI7478DP-T1-E3
TI-BB
2809
4.21
Cicotex Electronics (HK) Limited