Part Number | SI7884BDP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 40V 58A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3540pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 4.6W (Ta), 46W (Tc) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
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SI7884BDP-T1-E3
TI/ST
5120
0.21
HK HEQING ELECTRONICS LIMITED
Si7884BDP-T1-E3
TexasIns
3500
1.23
Gallop Great Holdings (Hong Kong) Limited
SI7884BDP-T1-E3
TI/CC
10005
2.25
N&S Electronic Co., Limited
SI7884BDP-T1-E3
TI?
13298
3.27
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7884BDP-T1-E3
TI-BB
3000
4.29
Belt (HK) Electronics Co