(5/5) based on 7 customer reviews
Description
MOSFET 2P-CH 20V 4.2A 1212-8 Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 4.2A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.3W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual
| Part Number | SI7911DN-T1-E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET 2P-CH 20V 4.2A 1212-8 |
| Series | TrenchFET |
| Packaging | |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Rds On (Max) @ Id, Vgs | 51 mOhm @ 5.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK 1212-8 Dual |
| Supplier Device Package | PowerPAK 1212-8 Dual |
| Image |  |
SI7911DN-T1-E3
TI/ST
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0.2
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